3D00600 - SEMI 3D6 - Guide for CMP and Micro-Bump Processes for Frontside Through Silicon Via (TSV) Integration StdPbc-0426 including shape

including shape

The purpose of this document is to standardize the method for measurement of electrical and optical characteristics of bent cold cathode fluorescent lamp (CCFL)

SEMI C69-1015 (Reapproved 1220)

and transient electric and electromagnetic fields

本文書の目的は，半導体産業で使用される水酸化ナトリウム50%溶液に対する要求条件を標準化し，またこれらのスタンダードをサポートする試験手順を標準化することである。試験方法は，統計的に有効な結果を示している。SEMI C1の通り代替法の妥当性が確認されたなら，それを使用してもよい。

3D00600 - SEMI 3D6 - Guide for CMP and Micro-Bump Processes for Frontside Through Silicon Via (TSV) Integration StdPbc-0426 including shapeIn order to speed up volume production of 3DS IC products, a generic middle end process flow is needed to communicate the frontend and backend processes. The quality criteria and metrology methodology of the key modules such as TSV, chemical mechanical planarization (CMP), and micro bump are developed to ensure high yield of the middle end process. Therefore, this guide provides a generic middle end process flow to define acceptable TSV and CMP